Amorphous and polymorphous silicon

Thin film silicon coating by PECVD* from silane (SiH4) :

 A moderate temperature process 150-250°C
 High quality thin films are produced : hydrognated amorphous silicon, polymorphous, microcristalline, doped or intrinsic, silicon-carbon and silicon-germanium alloys ...
 Necessary to get semiconducting properties, hydrogen is naturally incorporated by this technique
 It is self-cleaning by plasma etching of the reactors

* PECVD = Plasma Enhanced Chemical Vapor Deposition

SOLEMS process for silicon p-i-n components : solar cells, modules and sensors.

More in SOLEMS manufacturing process

Available in SOLEMS on 300 x 300 mm sheets :

• a-Si:H intrinsic, p-type or n-type
• a-SiC:H p-type
• stacked layers p-i-n for example <1µm

Apply to us for any request.